Regime pierre cohen orsay

Based on existing expertise on heteroepitaxial bonding of Ga As on In P [14], we have developed heteroepitaxial bonding of III-V materials on Si and SOI substrates for telecom wavelengths.Such an oxide-free interface associated with the nanostructured design of the guiding geometry has great potential for both electrical and optical operation of improved hybrid devices.The future of all optical networks links relies upon hybrid silicon photonics.Next, for photonic purposes, we implement a uniquely designed sub-wavelength silicon waveguide patterning that provides in a single technological step advanced optical functions while keeping the Si guiding surface planar enough for maintaining the oxide-free bonding compatibility.Nevertheless, in this work, a thin oxide layer is generated during bonding processes.This oxide-free bonding technique has demonstrated atomic-plane-thick reconstruction across the interface, leading to a high bonding energy and no degradation of the photoluminescence of bonded quantum wells located close to the hybrid interface [15,16].The intermediate bonding layer is usually a dielectric material (Si O layer [8,9].Bonding without an intentional additional layer has been obtained in Arakawa’s group [10,11], allowing electrical operation under carrier injection through the interface.As a negative consequence, any intense carrier flow produces a large Joule overheating, hampering high output power of, e.g., hybrid lasers through a large thermal roll-off [5,8]. Electrical operation across the hybrid interface potentially provides immense gains in terms of thermal-budget improvement, chip power consumption, and integration of driving electronics, welcome to boost data transfer rates.

This bonding approach has indeed produced sophisticated integrated devices [3,4], based on classical photonic integrated circuit schemes, taking advantage of the Si guiding layer to route optical signals as well.However, silicon is not able to produce two essential optical functions: photon emission and optical isolation.Hybrid bonding of III-V on Si has been intensively developed for integrated photonics on silicon, but mainly with the help of an intermediate layer that provides bonding at annealing temperatures in the 250–300 °C range compatible with CMOS processing.A hybrid In P-on-SOI waveguide, including a bi-periodic nano structuration of the silicon guiding layer is demonstrated to provide wavelength selective transmission.The hybrid interface is characterized electrically and mechanically.